| 摘要 |
<p>An epitaxial wafer having a good surface and having a buffer layer of a resistance higher than that of the prior art. The epitaxial wafer has at least a buffer layer (42) and an active layer (43) successively formed on a GaAs substrate (41), wherein the buffer layer (42) has a multilayer structure of a non-doped AlYGa1-YAs (0.005≤Y≤0.05) layer (42a) and a non-doped AlXGa1-XAs (0.10≤X≤0.35) layer (42b). The non-doped AlYGa1-YAs (0.005≤Y≤0.05) layer (42a) is in contact with the GaAs substrate (41).</p> |
