| 摘要 |
PROBLEM TO BE SOLVED: To avoid causing a flaw on a polishing surface during chemical machinery polishing used for inter-layer film formation related to manufacturing of a semiconductor device of multi-layer interconnection structure. SOLUTION: An end part around a silicon wafer 101 of a resist pattern 107 is positioned at the same position of an end of a first inter-layer film 102a or outside thereof. In short, W2>=W3. Then, with the resist pattern 107 as a mask, an insulating film 106 is selectively etched and removed, and after that, the resist pattern 107 is removed, thus forming a second inter-layer film 106a. |
