发明名称 |
BAXSR1-XTI03-Y TARGET MATERIAL FOR SPUTTERING |
摘要 |
PROBLEM TO BE SOLVED: To obtain a target material for sputtering composed of a sintered compact, represented by Bax Sr1-x TiO3-y enabling the production of a thin film hardly containing particle defects and simultaneously improving the mechanical strength. SOLUTION: This target material for sputtering has >=97% relative density of a sintered compact and <=3 μm average crystal grain diameter of the sintered compact in the target material for the sputtering composed of the sintered compact of a perovskite type compound oxide represented by the formula Bax Sr1-x TiO3-y [0<=(x)<1 and 0<=(y)<0.5]. The target material for the sputtering is produced by baking a synthetic powder of the Bax Sr1-x TiO3-y having <=1 μm average grain diameter according to a hot-pressing method, a method for using the hot-pressing method and a hot isostatic pressing(HIP) in combination and a method for using a sintering method under atmospheric pressure and the HIP in combination. |
申请公布号 |
JPH11106258(A) |
申请公布日期 |
1999.04.20 |
申请号 |
JP19970283202 |
申请日期 |
1997.10.01 |
申请人 |
JAPAN ENERGY CORP |
发明人 |
SUZUKI SATORU;SUZUKI TSUNEO |
分类号 |
C04B35/46;C23C14/34;H01L21/8242;H01L21/8246;H01L27/105;H01L27/108 |
主分类号 |
C04B35/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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