| 摘要 |
PROBLEM TO BE SOLVED: To reduce the wiring inductance by a method wherein a snubber circuit is built in a power semiconductor module where a semiconductor chip for switching is built in. SOLUTION: A switching semiconductor chip 2 is installed, it is wire-bonded to bars for output terminals so as to be drawn out to the outside to form output terminals 10, 11, and a snubber circuit consisting of a diode 7 and a capacitor 8 is connected to a part of the bars for the output terminals closer to the chip 2. When the switching semiconductor chip 2 is switched, a voltage generated by the switching is absorbed by internal wiring inductances 3, 5, the diode 7, the capacitor 8 and internal wiring inductances 6, 4. At this time, since the snubber circuit is installed inside the module, the internal wiring inductances 5, 6 can be made small. In addition, since the snubber circuit is connected to parts close to the chip 2 at the bars for the output terminals, the internal wiring inductances 3, 4 of the bars for the output terminals can be made small. |
