首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
PIPE FITTING
摘要
申请公布号
JPH1151266(A)
申请公布日期
1999.02.26
申请号
JP19970204563
申请日期
1997.07.30
申请人
SEKISUI CHEM CO LTD
发明人
HARUNA SAKAE
分类号
F16L21/04;F16L21/08;(IPC1-7):F16L21/04
主分类号
F16L21/04
代理机构
代理人
主权项
地址
您可能感兴趣的专利
METHOD FOR REDUCING LATERAL EXTRUSION FORMED IN SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR STRUCTURES FORMED THEREOF
SEGMENTED GUARD RING STRUCTURES WITH ELECTRICALLY INSULATED GAP STRUCTURES AND DESIGN STRUCTURES THEREOF
PYROELECTRIC ALUMINUM NITRIDE MEMS INFRARED SENSOR WITH SELECTIVE WAVELENGTH INFRARED ABSORBER
METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE AND SOLID-STATE IMAGING DEVICE
INERTIAL AND PRESSURE SENSORS ON SINGLE CHIP
SENSORS AND METHOD OF OPERATING SENSOR
METHOD FOR CORE AND IN/OUT-PUT DEVICE RELIABILITY IMPROVE AT HIGH-K LAST PROCESS
FINFET DEVICES INCLUDING RECESSED SOURCE/DRAIN REGIONS HAVING OPTIMIZED DEPTHS AND METHODS OF FORMING THE SAME
METHOD, STRUCTURE AND DESIGN STRUCTURE FOR CUSTOMIZING HISTORY EFFECTS OF SOI CIRCUITS
SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME
Vertical Semiconductor MOSFET Device with Double Substrate-Side Multiple Electrode Connections and Encapsulation
A SUPPER JUNCTION STRUCTURE INCLUDES A THICKNESS OF FIRST AND SECOND SEMICONDUCTOR REGIONS GRADUALLY CHANGED FROM A TRANSISTOR AREA INTO A TERMINATION AREA
Dual Trench Rectifier and Method for Forming the Same
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Methods and Apparatus for Bipolar Junction Transistors and Resistors
GALLIUM NITRIDE-BASED DIODE AND METHOD OF FABRICATING THE SAME
X-RAY DETECTING PANEL AND MANUFACTURING METHOD THEREOF
Thin film transistor array substrate
FLEXIBLE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
WHITE ORGANIC LIGHT EMITTING DIODE DEVICE
