发明名称 Solid-state image sensor and method of fabricating the same
摘要 There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including electrodes in a photoelectric conversion region, and transmitting signals when detecting a light passing through the electrode (5), the solid-state image sensor converting the signals into time sequence electric signals, characterized by that the electrode (5) is composed of titanium dioxide (TiO2). The titanium dioxide preferably contains oxygen vacancies or at least one of tungsten (W), phosphorus (P), antimony (Sb), tantalum (Ta), niobium (Nb), indium (In) and oxides thereof (WO3, P2O5, Sb2O5, Ta2O5, Nb2O5, In2O3). The above-mentioned solid-state image sensor provides a high quantum efficiency which would be obtained when transparent, electrically conductive material such as ITO (In2O3-SnO2) and tin oxide (SnO2) is used. <IMAGE>
申请公布号 EP0858112(A3) 申请公布日期 1999.01.20
申请号 EP19980101889 申请日期 1998.02.04
申请人 NEC CORPORATION 发明人 TOHYAMA, SHIGERU
分类号 H01L21/285;H01L21/28;H01L27/146;H01L27/148;H01L31/10 主分类号 H01L21/285
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