发明名称 HYBRID PHOTO-SENSITIVE CIRCUIT
摘要 FIELD: semiconductor electronics, in particular, design of multiple-unit photodetectors. SUBSTANCE: multiple-unit photodetector in hybrid photo-sensitive circuit is based on X-Y addressing. Each column is connected to corresponding channel of linear multiplexer which provides possibility to accumulate signal charges. In addition multiple-unit photodetector is equipped with additional layer, which is located between structure with quantum dips and lower conducting layer and has opposite conductance. This layer is electrically cut into strips which are continuous within range of each line and are connected to corresponding channels of line commutator. EFFECT: increased threshold sensitivity in conditions of increased background illumination. 2 dwg
申请公布号 RU2125321(C1) 申请公布日期 1999.01.20
申请号 RU19970105722 申请日期 1997.04.10
申请人 GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE NAUCHNO-PRO;IZVODSTVENNOE PREDPRIJATIE PUL 发明人 AVETISJAN G.KH.;ZALEVSKIJ I.D.;KULIKOV V.B.
分类号 H01J47/00;(IPC1-7):H01J47/00 主分类号 H01J47/00
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