发明名称 |
Method for forming pattern |
摘要 |
The composition of a resist material is determined so that the film thinning quantity of the resist pattern is increased when the profile of a resist pattern which is formed in advance tends to be a T-top profile as compared with a reference pattern profile but so that the film thinning quantity of the resist pattern is decreased when the profile of the resist pattern which is formed in advance tends to be a round-shoulder profile as compared with the reference pattern profile. After coating a semiconductor substrate at its top with the resist material whose composition is determined as such to thereby form a resist film, the resist film is exposed through a mask. The exposed resist film is developed, whereby a resist pattern is obtained.
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申请公布号 |
US5856069(A) |
申请公布日期 |
1999.01.05 |
申请号 |
US19970886446 |
申请日期 |
1997.07.01 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ENDO, MASAYUKI;KATSUYAMA, AKIKO |
分类号 |
G03F7/004;G03F7/039;G03F7/16;G03F7/20;G03F7/26;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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