发明名称 METHOD AND UNIT FOR EVALUATING SEMICONDUCTOR FILM AND METHOD FOR FORMING SEMICONDUCTOR FILM
摘要 <p>PROBLEM TO BE SOLVED: To manage the process for forming a semiconductor film constantly during the production process by evaluating the crystal grain size of a semiconductor film based on the reflectance of light in a specified wavelength region thereof. SOLUTION: The unit for evaluating a semiconductor film, e.g. a polysilicon (p-Si) film deposited on a glass substrate by excimer laser anneal ELA, being employed in a liquid crystal display comprises an operating section 1, a memory section 2 and a detecting section 3. The detecting section 3 irradiates a substrate 5 to be processed, on which the p-Si is formed, with a detection light and inspects the spectral characteristics of reflected light. The operating section 1 examines the wavelength dependence of reflectance and the minimal value of primary variation rate in the wavelength region of 500 nm or thereabout thus determining the optical value. The optical value has a linear relationship to the p-Si crystal grain size which is determines using information held in a memory section 2. Optimal regulation can be performed constantly by measuring the crystal grain size in-line in the process of ELA, or the like.</p>
申请公布号 JPH10300662(A) 申请公布日期 1998.11.13
申请号 JP19980037342 申请日期 1998.02.19
申请人 SANYO ELECTRIC CO LTD 发明人 IMAO KAZUHIRO;KUWABARA TAKASHI;MORIMOTO YOSHIHIRO;YONEDA KIYOSHI
分类号 G01B11/08;G01N21/00;G01N21/27;G02F1/136;G02F1/1368;H01L21/205;H01L21/66;(IPC1-7):G01N21/27 主分类号 G01B11/08
代理机构 代理人
主权项
地址