Verfahren zur Herstellung eines vertikalen MOS-Transistors

摘要

In order to produce a vertical MOS transistor, a mask (13) with an opening is formed on a semiconductor substrate. Grown in the opening by selective epitaxy is a layer sequence (14) comprising a lower source/drain region (141), a channel region (142) and an upper source/drain region (143). Facets are formed at the edge such that the layers are thinner at the edge than in the centre. A gate dielectric (16) and gate electrode are formed at the edge of the layer sequence.