| 摘要 |
PURPOSE:To reduce the number of required X-ray masks and permit a minute pattern to be obtained with a high accuracy within a short period of time, by a method wherein when a resist on a substrate is to be exposed, a part of the resist is irradiated with X-rays, and the other part is irradiated with electron beams. CONSTITUTION:An X-ray mask 10 is positioned on the upper part of a substrate 1 and is irradiated with X-rays from the upper side as shown by arrows P. Soft X-rays are employed for the irradiation at about 15mJ/cm<2>. The X-rays are shielded in the part of a light-shielding pattern 12, and only a pattern formed of a soft X-ray absorbing layer 11 is transferred to a resist 3. Then, the resist 3 is exposed, as shown by arrows Q, to electron beams accurately positioned by predetermined register marks. Upon completion of the exposure, the resist 3 is developed by a predetermined developer and is then rinsed to obtain a minute resist pattern 13. With the thus obtained resist pattern 13 used as a mask, a ground thin film 2 is etched. Subsequently, the resist pattern 13 is peeled off to obtain a desired pattern 14. The thus obtained pattern 14 has such an accurate configuration that each edge of the pattern is very sharply formed. |
