POLISHING END DETECTION DEVICE AND POLISHING METHOD FOR WAFER

摘要

PROBLEM TO BE SOLVED: To measure the thickness of a film layer favorably in the polishing process of the film layer in order to increase the accuracy of a polishing end applied to the film layer for constituting a wafer surface. SOLUTION: This device is provided with a cleaning tank 44 in which a cleaning liquid 45 is filled and a wafer surface 20a is washed by the dipping of a wafer 20 into the cleaning liquid 45 and also the corrosion by the chemical action of a liquid polishing agent is stopped, the handling device 46 of the wafer for holding the wafer 20 in a polishing process and for dipping it in the cleaning liquid of the cleaning tank 44a and a film thickness detection device 21 in which one end surface 31a of an optical fiber 31 is provided at the position of the inside of the cleaning tank 44 facing to the wafer surface 20a dipped in the cleaning liquid, the other end 31b of the optical fiber is connected to a main body 21a provided on the outside of the cleaning tank 44 and the thickness of the film layer for constituting the wafer surface 20a is detected by an optical nondestructive measurement method.