| 摘要 |
A solid-state infrared sensor using a Schottky barrier diode. The sensor has a first layer of a semiconductor of a first conductivity type and a second layer of a metal or a metal silicide and the first and second layer are joined to each other to form the Schottky barrier diode. Further, the sensor includes a third layer disposed in the depletion layer formed in the first layer out of contact with the Schottky junction interface. The third layer contains an impurity which is introduced for positioning an effective barrier formed in the depletion layer under an image force, closely to the junction interface. Intensity of an infrared radiation is detected using a multiple reflection effect of hot carriers. According to the infrared sensor, since the position of the effective barrier generated by an influence of a image force is close to the Schottky junction, the attenuation of the energy of the hot carriers is suppressed and the injection yield of the hot carriers passing through the Schottky barrier is increased.
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