| 摘要 |
A semiconductor memory including first, second, and third data busses, and first and second memory cell arrays arranged among the first, second, and third data busses. During operation of the semiconductor memory, a first, a second, and a third circuit selectively couple the first, second, and third data busses to a fourth and a fifth data bus. Additionally, there is provided first and second buffer circuits, which are respectively coupled to the fourth and the fifth data busses, and a sixth data bus, which is commonly coupled to the first and second buffer circuits. A control circuit is used to control the operation of the switch circuits. In preferred embodiments, the number of buffer circuits in the semiconductor memory is less than or equal to the number of memory cell arrays.
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