| 摘要 |
PROBLEM TO BE SOLVED: To obtain a polycarbosilane which has a main chain comprising carbon and silicon atoms and in which the side chains bonded to a carbon atom are hydrogen atoms and the side chains bonded to a silicon atom are hydrocarbon groups in each of which theβ-position is a tert. carbon atom or are a hydrogen atom and a hydrocarbon group in which theβ-position is a tert. carbon atom and to obtain a high-quality thin SiC film by thermally decomposing the polycarbosilane on a substrate board in an inert gas atmosphere. SOLUTION: In this polycarbosilane, the side chains bonded to a carbon atom are hydrogen atoms; and the side chains bonded to a silicon atom are hydrocarbon groups which are represented by formula (wherein R1 to R4 are each a hydrocarbon group; (n) is 1 or higher) and in each of which theβ-position is a tert. carbon atom or the side chains are a hydrogen atom and a hydrocarbon group which is represented by formula II (wherein R1 and R2 are each a hydrocarbon group; (l) and (m) are each 0 or higher provided l+m=1; (n) is 1; and (p) is 1 or higher) and in which theβ-position is a tert. carbon atom. The polycarbosilane is dissolved in benzene, etc., applied to a substrate board, and thermally decomposed in an inert gas atmosphere at 320-520 deg.C as the first stage to separate almost all the side chains and then at 600 deg.C of higher as the second stage to completely separate hydrocarbon groups to thereby convert the polycarbosilane into SiC, thus forming a thin film on the board.
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