| 摘要 |
An ion source(1) for an ion feeding, a filament(2) which emits thermal electron after being heated, a filament electric source part(3) for feeding an electric source to a filament(2), a bias electric source part(4), a rear parady(6) for generating the secondary electron by colliding a thermal electron against the surface and a -1000V bias ring and a -40V bias ring are located on both sides of it, a disc(7) where a wafer is fixed, and an ion beam current measurement device(9) for measuring the ion volume which is poured into the wafer(5) are linked to the secondary electron feed apparatus of the wafer. Also, a disc current volume measurement device(10) is linked to estimate the contamination level of the rear parady by detecting the secondary electrons generated at the rear parady between the disc(7) and the ion beam current measurement device(9).
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