| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for preventing lowering of growth film quality and throughput, related to a chemical vapor, phase growing device and growing method. SOLUTION: A growth chamber 10, a carry-in chamber 15 where a semiconductor substrate 40 which is carried to the growth chamber 10 waits, and a gate part 20 which, disported between the carry-in chamber 15 and the growth chamber 10, is opened/closed for carry in/out of the semiconductor substrate 40 between the carry-in chamber 15 and the growth chamber 19, are provided. When the gate part 20 is opened for carrying the semiconductor substrate 40 to the growth chamber 10, the semiconductor substrate 40 waits at positions higher than the upper surface of the gate part 20. The position where the semiconductor substrate 40 waits set higher than the upper surface of the gate part 20 by 50mm or above. Lowering of growth in the quality of film and throughput caused by exposing the growth chamber 10 to atmosphere is prevented, and in addition, lowering growth film quality caused by sticking of foreign substances is prevented. |
