| 摘要 |
PROBLEM TO BE SOLVED: To prevent a thin film on a protrudent layer structure from peeling, by forming on this surface a stress relaxing layer having a stress on a direction to relax the dynamic stress of this layer structure. SOLUTION: On a protrudent layer structure a stress relaxing layer having a stress in a direction to relax the dynamic stress of this layer structure is formed. After forming e.g. a MOSFET having a gate electrode composed of a poly-Si film 18 and WSi film 20 on a Si substrate 12, a SiN (p-SiN) film 26 is formed on the entire surface by the plasma CVD and treated to have a stress of about 10<10> Pa in a direction to relax (compression) the stress of the lower WSi film 20 so as to cancel the stress of about 10<10> Pa in the tensile direction of this film 20. A SiO2 film 28 and inter-SiO2 layer film 30 are formed. |
