MESFET having a termination layer in the channel layer

摘要

A lateral MESFET (10,20) utilizes a drain (17) and a source (18) damage termination layer to improve the breakdown voltage of the MESFET (10,20). The source (18) and drain (17) damage termination layers are very shallow to prevent interfering with lateral current flow in the channel layer (12). The source (18) and drain (17) damage termination layers are formed by implanting large inert ions using high implant doses and low implantation energies.