| 摘要 |
PROBLEM TO BE SOLVED: To improve optical conductivity, optical stability and spectral sensitivity characteristic, by forming a layer made of specific i-type amorphous silicon on a base layer made of amorphous silicon with a specific content of chlorine, a specific optical gap and a specific porosity. SOLUTION: A base layer is composed of amorphous silicon with a chlorine content of 0.1-5.0atom%, an optical gap of 1.9-2.5eV and a porosity of 5.0-15vol%. One or more layers of i-type amorphous silicon with an optical gap smaller than that of the base layer, a chlorine content of 0.005-0.1atom%, an optical gap of an optical gap of 1.6-1.9eV and a porosity of 0.01-5.0vol%, are formed on the base layer. For the purpose, gas in plasma is supplied to a film formation chamber 1 from a connecting section. Material gas is supplied from a material gas feed port 7 with its flow rate adjusted by means of a flow rate regulator 8. The gases are mixed there. The mixed gas is brought into contact with a substrate 3 heated to a specific temperature by a heater 10, and an amorphous silicon film is thereby formed on the surface of the substrate. |
