发明名称 CLEANING METHOD OF POLY-SILICON FILM
摘要 cleaning a polysilicon film which is doped with POCl3 using HF solution; cleaning the polysilicon film using HNO3 solution; and cleaning the polysilicon film using HF solution. The method is for preventing the defect, decoloration phenomenon and feeding phenomenon after the formation of a silicide film by performing the cleaning of the polysilicon film using HNO3 solution before forming the silicide film.
申请公布号 KR0119918(B1) 申请公布日期 1997.10.17
申请号 KR19940011978 申请日期 1994.05.30
申请人 HYUNDAI ELECTRONICS IND. CO.,LTD 发明人 YU, JIN-SAN;JUNG, CHANG-WON
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址
您可能感兴趣的专利