发明名称 |
CLEANING METHOD OF POLY-SILICON FILM |
摘要 |
cleaning a polysilicon film which is doped with POCl3 using HF solution; cleaning the polysilicon film using HNO3 solution; and cleaning the polysilicon film using HF solution. The method is for preventing the defect, decoloration phenomenon and feeding phenomenon after the formation of a silicide film by performing the cleaning of the polysilicon film using HNO3 solution before forming the silicide film.
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申请公布号 |
KR0119918(B1) |
申请公布日期 |
1997.10.17 |
申请号 |
KR19940011978 |
申请日期 |
1994.05.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO.,LTD |
发明人 |
YU, JIN-SAN;JUNG, CHANG-WON |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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