| 摘要 |
<p>A vapor phase growth apparatus and a vapor phase growth method capable of forming an excellent compound semiconductor thin film made of a compound of two or more components and having few defects and using a material gas highly efficient to enhance the productivity. At least two kinds of material gas are introduced in parallel with the surface of a substrate (11) placed in a reaction tube (10) to form a semiconductor thin film of a chemical compound of two or more components on the surface of the substrate (11). The vapor phase growth apparatus comprises: partitions (18) and (19) arranged on the upstream side of the substrate placing portion of the reaction tube (11) in parallel with the surface of the substrate (11), for partitioning the inside of the reaction tube into three parallel passages of a first passage (20), a second passage (21) and a third passage (22) from the substrate placing portion; a first vapor phase growth gas introduction tube (23) communicating with the first passage (20), a second vapor phase growth gas introduction tube (24) communicating with the second passage (21); and a growth promoting gas introduction tube (25) communicating with the third passage (22).</p> |
