| 摘要 |
PROBLEM TO BE SOLVED: To provide a grinding method of a semi-conductor wafer capable of preventing the surface sagging generated on an outer circumferential part of the semi-conductor wafer, and grinding the semi-conductor wafer of excellent flatness. SOLUTION: A grinding block 1 comprises a ceramic plate 11, a backing pad 12, and a template 13. The backing pad 12 whose compressibility is larger than that of an abrasive cloth 2 is used. A semi-conductor wafer 3 is mounted on the grinding block 1. The semi-conductor wafer 3 is pressed against the abrasive cloth 2 for grinding. |
