| 摘要 |
<p>PROBLEM TO BE SOLVED: To decrease the number of photoetching processes so as to simplify the processes and to save the cost by patterning a protective film and a light- shielding film or patterning a protective film having a light-shielding function, then using the patterned film as a mask to etch a semiconductor layer. SOLUTION: A gate wire 11 and a gate electrode 12 are formed on a transparent insulating substrate, and then a gate insulating layer and a semiconductor layer are successively formed. After a conductive film is formed, a data wire 51, a source electrode 52 and a drain electrode 53 are formed in a photoetching process. A protective film and a light-shielding film or a protective film 60 comprising an opaque material is laminated subjected to photoetching. In this process, the protective film 60 covers the whole data line 51 and the source electrode 52 and a part of the drain electrode 53. After the semiconductor layer is etched by using the protective film 60 as a mask, a transparent conductive material is laminated thereon and subjected to photoetching to form a pixel electrode 70. Thus, only four masks are necessary to produce this substrate.</p> |
