| 摘要 |
A method of making an epitaxial material in a CVD reactor by growing an epitaxial layer on a Si wafer so as to form regions contg. misfit dislocations comprises cooling the wafer 50 deg C from its original temp., introducing a Ge-contg. gas into the reactor to grow a Si layer contg. 2-3% of Ge (38), purging the reactor and heating the wafer to the original temp. and growing a Ge-free layer (46). The chamber is purged again and a second Ge-free layer (42) grown, which is etched and partly removed, and the chamber again purged. |
