| 摘要 |
PROBLEM TO BE SOLVED: To form a plated film excellent in adhesion on aluminum by using pretreatment liquid, which contains components reacting upon dissolved oxygen, and cleaning liquid. SOLUTION: An aluminum film of about 1μm is made on a silicon substrate by sputtering method, and thereon a silicon oxygen film is made in the thickness of about 1μm by CVD method. Next, by usual photolithography method, application, exposure, and development are performed, and an aluminum electrode pattern 5 is made in the photoresist film 4, and the silicon oxide film at the aluminum electrode part is dissolved and removed by hydrofluoric acid. The aluminum at the electrode part is cleaned without oxidation, using the cleaning water containing sodium sulfite by 2g/l for the cleaning after dissolution removal. Next, it is soaked in electroless nickel plating liquid to perform plating with pH6.5 and 90 deg.C in liquid temperature, thus a nickel plated film 3 of 3μm is made on aluminum.
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