| 摘要 |
Capacitor manufacturing method for semiconductor, where increases the capacitance easily. The conductive layer pattern is generated to limit each cell of each conductive layer. The silicon layer is generated on the conductive layer pattern, and has a grain(HSG) of hemisphere. The PxOy film is generated on the HSG silicon layer using the POCl3, and masking the PxOy film and etching the conductive layer pattern the HSG silicon layer. Therefore the bottom electrode of capacitor that has several fine trenches on the top surface is generated.
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