SEMICONDUCTOR DEVICE & MANUFACTURING METHOD

摘要

A semiconductor memory device using SOI includes a first semiconductor substrate, a plurality of semiconductor layers formed on the first semiconductor substrate and divided from one another by a first insulating layer, a conductive pattern formed on sidewalls of the semiconductor layers, a gate electrode of a transistor, which is formed on the semiconductor layers and serves as a word line, a first contact hole formed on the first insulating layer placed on the semiconductor layers through the back side of the substrate, and a capacitor formed on the semiconductor layers and connected to the conductive pattern through the first contact hole, through the back of the semiconductor substrate.