| 摘要 |
PROBLEM TO BE SOLVED: To form an air bridge between amorphous silicon carbide films on a conductor by a method wherein the conductor is separated into two conductors by a void, the amorphous silicon carbide film and a sacrifice material film are formed on the edge parts of the conductors, a bridge is formed on the amorphous silicon carbide film, which covers the two conductors and the sacrifice material film, and the sacrifice material film is etched. SOLUTION: A conductor 2 is formed on a device in such a way that it is separated into two conductors by a void region 3. The conductors have adjacent edge parts 4 in the lateral direction, an amorphous silicon carbide film is deposited on the edge parts 4 and a sacrifice material film is deposited in a void in the silicon carbide film. An amorphous silicon carbide film is formed on the sacrifice material film and the amorphous silicon carbide film is etched to leave the film on the sacrifice material film. A conductive bridge 12 is formed on an amorphous silicon carbide film, which covers the two conductors 12 and the sacrifice material film, and the upper part of the bridge 2 is covered with an amorphous silicon carbide film. Lastly, by etching the sacrifice material film, an air bridge (a void 14) can be formed between the silicon carbide films on the conductors. |
