| 摘要 |
PROBLEM TO BE SOLVED: To provide a phase shift mask having good quality by a simple method. SOLUTION: A phase shifter film 2 is dry etched by using a photoresist pattern 3 having a taper 4 at its edge part at the time of patterning of the phase shifter film 2 in the process for producing a phase shift mask having a function to change the phase of light by arranging the phase shifter film 2 on a mask substrate 1. The taper 5 is thereby formed at the edge part of the phase shifter film 2. The formation of the taper 4 at the edge part of the photoresist pattern 3 is executed simply by shifting the focus at the time of exposure of the photoresist. |
