| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method capable of easily predicting the deterioration in the capacity of a semiconductor due to the increase in wiring capacity by correctly forming even dummy patterns having satisfactory spreading rate. SOLUTION: The reference dummy patterns are formed by forming pattern cells in arrayal mode to set up the region capable of forming the dummy patterns according to the first patterns 1, 1 required for activating the device to select the pattern cells positioned in said region of the reference dummy patterns for the formation of the dummy pattern 7 so that this dummy pattern 7 and the first patterns 1, 1' may be composed to form the layout pattern. |
