| 摘要 |
PROBLEM TO BE SOLVED: To enhance the breakdown voltage of filter capacitor in a DRAM being applied with a voltage from an external power supply without increasing the fabrication cost. SOLUTION: The lower electrode, dielectric film of capacitor and upper electrode of a filler capacitor 23 are formed, respectively, of polysilicon composing the lead-out electrode of a memory cell 11, ONO and silicon oxide composing the dielectric film on a memory cell capacitor 13, and polisilicon composing the upper electrode of the capacitor 13. Consequently, the filter capacitor 23 can be formed simultaneously with the memory cell capacitor 13, and the density of defects in the capacitance insulation layer of the filter capacitor 23 is lowered by the ONO. |
