SEMICONDUCTOR PRESSURE SENSOR AND PRODUCTION METHOD THEREOF

摘要

The present invention relates to a semiconductor pressure sensor comprising a single crystal silicon substrate; a closed air gap chamber provided on the said single crystal silicon substrate, on which a measured diaphragm made by epitaxial growth is formed and which has a predetermined narrow gap backing up the application of over-pressure to the said diaphragm; and a strain detection element incorporated in the said measuring diaphragm. <IMAGE>