Method of forming a Ga2O3 dielectric layer

摘要

A method of forming a dielectric layer on a supporting structure of III-V material having a clean and atomically ordered surface to be coated with a dielectric layer including the step of depositing a layer of Ga2O3, having a sublimation temperature, on the surface of the supporting structure by evaporation using a high purity single crystal of material including Ga2O3 and a second oxide with a melting point greater than 700 DEG C. above the sublimation temperature of the Ga2O3. The evaporation can be performed by any one of thermal evaporation, electron beam evaporation, and laser ablation.