Doping of IIB-VIA semiconductors during molecular beam epitaxy electromagnetic radiation transducer having p-type ZnSe layer

摘要

An electromagnetic radiation transducer is provided having a p-type ZnSe layer and an n-type layer. The p-type ZnSe layer has a net donor to net acceptor ratio (ND/NA) of less than or equal to about 0.8. The net acceptor concentration is greater than about 5x1015cm -3 and the resistivity is less than 15 OMEGA -cm. The p-type ZnSe layer is deposited by doping the ZnSe during fabrication with a neutral free-radical source.