Method for etching a semiconductor material without altering flow pattern defect distribution

摘要

A method of etching a generally planar surface of a semiconductor material to reveal flow pattern defects on the surface, by placing the material in a canted position, ranging from about 5 DEG to about 35 DEG from vertical, such that the generally planar surface of the material faces upwardly. The material is then immersed into a stagnant etchant solution. The surface of the material is etched such that bubbles nucleating at flow pattern defects on the surface of the canted material are released directly into the otherwise stagnant etchant solution.