| 摘要 |
PROBLEM TO BE SOLVED: To cause semiconductor devices, each having a contact surface controllable by a gate electrode through the medium of at least one integrated ohmic resistor being between the contact surface and an electrode, to be suitable for parallel connection even without separate resistors. SOLUTION: A gate electrode 1 has a cavity 4 where a contact surface 3 is arranged. Between the contact surface 3 and the gate electrode 1, a doped polysilicon is interrupted by etching for example. In the cavity 4, there are islands 5 for forming ohmic resistors integrated between the contact surface 3 and the gate electrode 1. The islands 5 are made from doped polycrystalline silicon, and have the same doping as the contact surface 3 and the gate electrode 1. Besides, each island 5 is connected to the gate electrode 1 at one side and to the contact surface 3 at the other side. |
