发明名称 |
Method of adjusting a threshold voltage of a semiconductor on insulator device |
摘要 |
<p>A method of adjusting a threshold voltage for a semiconductor device with a doped channel on an SOI substrate comprises forming a gate structure (16) on an isolated active region (13) and forming a patterned photoresist leaving the active region exposed. The active region is dopant-implanted (22), the gate preventing implant beneath it, a second dopant (25) of second conductivity type is implanted through the gate and the photoresist, which stops both dopants, is removed and the dopants annealed. Also claimed are: (i) a method of mfg. a semiconductor device as above in which the gate structure comprises poly-Si on oxide and a spacer surround the gate; (ii) a method of mfg. a low-power, lateral semiconductor device as above; (iii) a method of adjusting a threshold voltage as above, additionally implanting a third dopant into the active region under the gate.</p> |
申请公布号 |
EP0739031(A2) |
申请公布日期 |
1996.10.23 |
申请号 |
EP19960105709 |
申请日期 |
1996.04.11 |
申请人 |
MOTOROLA, INC. |
发明人 |
RACANELLI, MARCO;HWANG, BOR-YUAN C.;FOERSTNER, JUERGEN;HUANG, WEN-LING MARGARET |
分类号 |
H01L27/092;H01L21/265;H01L21/336;H01L21/8238;H01L27/00;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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