Process for fabricating non-encroaching planar insulating regions in integrated circuit structures.

摘要

A method for fabricating insulating regions in an integrated circuit structure is disclosed in which the insulating regions do not encroach upon the surrounding integrated circuit and in which a substantially planar surface across the top of the insulating material and the substrate is created. The method includes the steps of removing portions of the substrate wherever the insulating regions are to be formed, beginning to deposit insulating material across the substrate and in the opeings created, and, while continuing to deposit insulating material simultaneously removing insulating material from generally horizontal surfaces and redepositing it on generally vertical surfaces of the substrate and the openings until a planar surface results.