首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
Verfahren zur quantitativen Messung dünnschicht-chromatographisch getrennter Proben
摘要
申请公布号
DE3921845(C2)
申请公布日期
1996.09.12
申请号
DE19893921845
申请日期
1989.07.03
申请人
ADAM, OLAF, DR., 82343 POECKING, DE
发明人
ADAM, OLAF, DR., 82343 POECKING, DE
分类号
G01N27/447;G01N30/68;G01N30/84;G01N30/95;(IPC1-7):G01N30/90;B01D15/08;B23K26/00;G01N22/00;G01N31/12;H05B6/64
主分类号
G01N27/447
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Power converter package including top-drain configured power FET
Non-volatile memory (NVM) cell and a method of making
Method for manufacturing semiconductor device with oxide semiconductor ohmic conatct layers
Transistor structure with silicided source and drain extensions and process for fabrication
Epitaxial structures
Current selector for non-volatile memory in a cross bar array based on defect and band engineering metal-dielectric-metal stacks
Process for forming a stack of different materials, and device comprising this stack
Peeling apparatus and manufacturing apparatus of semiconductor device
Semiconductor component arrangement comprising a trench transistor
Microelectronic packages with nanoparticle joining
Molded device with anti-delamination structure providing multi-layered compression forces
Interconnect structure and method of forming the same
Semiconductor device and method for forming the same
Semiconductor devices with optical through via structures, memory cards including the same, and electronic systems including the same
Method for manufacturing semiconductor structure through forming an additional layer inside opening of a photoresist layer
Semiconductor device having fan-in and fan-out redistribution layers
Method for fabricating a substrate and semiconductor structure
Cutting apparatus
Techniques and apparatus for anisotropic metal etching
Methods of forming transistor gates