| 摘要 |
A method of fabricating a metal oxide semiconductor transistor comprising: a silicon substrate having a first conductivity type in which its central portion having a channel region has a recessed surface and other portion excepting the central portion has a flattened surface, a thin gate oxide film formed on the recessed surface of the silicon substrate, an oxide film formed on the flattened of the silicon substrate and having a thickness a little thicker than that of the gate oxide film, a gate formed on the gate oxide film and having a structure in which its upper surface is flattened and its lower surface is convex, a thick cap oxide film on the gate, a low concentration source region and drain region having a second conductivity type overlapped completely with the gate and formed on a portion adjacent to the channel region of the recessed surface of the silicon substrate, a high concentration source region and drain region having the second conductivity type formed on the flattened surface of the silicon substrate and adjacent to the low concentration of source and drain region; and impurity regions formed on the silicon substrate such that they enclose the low concentration source region and drain region.
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