| 摘要 |
PURPOSE: To provide a resist pattern forming method capable of suppressing the shrinkage of the resist pattern caused by baking after developing and keeping a pattern form high in vertical property direct after developing. CONSTITUTION: A basic material 7 is infiltrated into whole of a chemically amplified cross-linking negative resist 6 on which the resist pattern is formed. Since an acid remaining inside of the chemically amplified cross-linking negative pattern is neutralized, the proceeding of cross-linking reaction in baking process after developing is prevented, the shrinkage of resist pattern caused by the baking after developing is suppressed and the resist pattern keeping the pattern form high in vertical property direct after developing is obtained. |
