Vorrichtung mit complementäre integrierte Schaltung mit Mitteln zur Verhinderung einer parasitären Auslösung
摘要
A complementary integrated circuit device is disclosed which includes a semiconductor substrate having a first area in which a plurality of first transistors are formed and a second area in which a plurality of second transistors are formed, each of the first transistors being larger in size than each of the second transistors. A guard ring region is formed in the substrate to surround the first area. The guard ring region is supplied with a power voltage via a first conductor line which is formed separately from a second conductor line supplying the power voltage to each of the first transistors.
申请公布号
DE3855356(D1)
申请公布日期
1996.07.18
申请号
DE19883855356
申请日期
1988.03.18
申请人
NEC CORP., TOKIO/TOKYO, JP
发明人
SUGAWARA, YUKARI, 7-15, SHIBA 5-CHOME MINATO-KU TOKYO, JP