| 摘要 |
PURPOSE: To obtain an amorphous semiconductor thin film which is narrow in band gap and low in defect density by a method wherein an amorphous semiconductor thin film is formed on a substrate through the plasma decomposition of compound which contains silicon, and a film forming/heating gas treating process where the amorphous semiconductor thin film is exposed to a heated gas atmosphere is repeatedly carried out. CONSTITUTION: A process where an amorphous semiconductor thin film is formed as thick as 0.4 to 60nm on a substrate through the plasma decomposition of compound which contains silicon and another process where the amorphous semiconductor thin film is exposed to a heated gas atmosphere are repeatedly carried out, whereby an amorphous semiconductor thin film of prescribed thickness is formed. The temperature of the heated gas is set to 100 to 800 deg.C. An amorphous semiconductor thin film formed through the above forming method is used as an intrinsic semiconductor layer. |
