发明名称 |
Thin film deposition apparatus |
摘要 |
A thin film deposition apparatus for use in a semiconductor manufacturing process or the like, is provided to, in particular, deposit a diffusion barrier thin film onto a substrate having a concave portion with a relatively high aspect ratio (hereinafter referred to as a contact hole). In the thin film deposition apparatus, a small surface and point source or a ring-shaped source is employed, evaporation is performed under such a condition that the Knudsen number Kn= lambda /H (a ratio of a mean free path lambda of an evaporation material particle to a distance (H) between the evaporation source and the substrate) becomes 0.1 or more, and a relation of the substrate and the evaporation source is set according to the aspect ratio of the contact hole, resulting in deposition of the thin film with good coverage on a bottom surface of the contact hole.
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申请公布号 |
US5525158(A) |
申请公布日期 |
1996.06.11 |
申请号 |
US19930128228 |
申请日期 |
1993.09.29 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TSUKAZAKI, HISASHI;OAKAMOTO, GORO;ITO, YUKI;YAMANISHI, KENICHIRO;ITO, HIROKI;HANAI, MASAHIRO;ISHII, HIROYUKI |
分类号 |
C23C14/32;C23C14/04;C23C14/22;C23C14/24;C23C14/34;C23C14/35;C23C14/46;H01J37/305;H01J37/317;H01J37/34;H01L21/203;H01L21/285;H01L21/768;(IPC1-7):C23C16/00 |
主分类号 |
C23C14/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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