Fluorine doped silicon oxide coating process

摘要

Formation of a fluorine-contg. silicon oxide film on a substrate comprises plasma-enhanced chemical vapour deposition using a fluorinated silicon source of formula (I). R1-R6 = F and remaining R = H, F, non-fluorinated-, partially fluorinated- or perfluorinated-: alkyl, alkenyl, alkynyl aryl or benzylic gps., or CxH2x when R1, R2 and/or R3 is connected to R4, R5 or R6 by bridging gp. CyH2y; x = 1-6; y = 0-6; M = Si or C; n = 0-6; R7 = H, F, CzH2z+1 or CrHsFt; z = 1-6; r = 1-6; s = (2r+1-t); and t = 1-(2r+1). Also claimed are: (a) a fluorine-contg. silicon oxide film supported on a substrate comprising SiOpFq, p = 2-q; and q = 0.03-0.6; (b) the compsn. of matter comprising F2Si(CH3)CH2CH2Si(CH3)F2; (c) the compsn. of matter comprising F3SiCH2CH2CH2CH(SiF3)C2H5; and (d) a process for forming a fluorine-contg. silicon oxide film on a substrate.