| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE CONTACT DEVICE |
| 摘要 |
forming an etching barrier made of polysilicon and nitride film in which the impurity is not implanted after forming the field oxide film in order to prevent the disconnection between the layers; and forming the contact hole of which size is greater than the one of gate electrode width.
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| 申请公布号 |
KR960004081(B1) |
申请公布日期 |
1996.03.26 |
| 申请号 |
KR19920025403 |
申请日期 |
1992.12.24 |
| 申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
HWANG, YONG |
| 分类号 |
H01L21/28;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 地址 |
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