| 摘要 |
PURPOSE: To eliminate level difference between a memory cell region and a peripheral circuit region without increasing the number of steps by connecting the storage electrode of a capacitive element electrically with a diffusion region through a contact hole. CONSTITUTION: An insulating film 23 is deposited covering the peripheral circuit region except the memory region. Etching stopper films 14, 21, 17, 22, effective at the time of etching the insulating film 23, are deposited covering the surface and side face of conductor patterns 13G, 13WL, 13G/WL for word line and conductor patterns 20BL, 20PAD for bit line in the memory cell region. A contact hole having peripheral edge, defined by the etching stopper film 17 covering the side face of the conductor patterns 13G, 13G/WL in the memory cell region, extends to the diffusion region 15B of a semiconductor substrate 10. The storage electrode 24 of a capacitive element is connected electrically with the diffusion region 15B through the contact hole. |
