| 摘要 |
PURPOSE: To prevent the interference of signal between bit lines by forming a first intersection for forming a transfer transistor in the extending direction of word line and a second intersection for forming no transfer transistor sequentially and then forming a storage electrode on the word line and bit line through an insulation film. CONSTITUTION: A region for forming a transfer transistor is located between bit lines BL1 while a plurality of active regions, present in the extending direction of word lines WL3 WL4 , are arranged in zigzag, i.e. shifted alternately in the lateral direction from the extending direction of the word lines WL3 , WL4 . The word line passes sequentially through a first intersection for forming the transfer transistor and a second intersection for forming no transfer transistor. The word lines WL3 , WL4 are bent to detour the contact part between the bit line BL1 and an impurity diffusion layer 14 and the contact part between a storage electrode 20a and an impurity diffusion layer 13. |
