| 摘要 |
PURPOSE:To obtain patterns of uniform line width even if the film thickness of an unexposed resist film on the upper plane of a step is different from the film thickness, which is located on the lower plane of the step, of the resist film in a pattern formation method, wherein a photosensitive film formed on a substrate having the step is patterned using a photolithography technique and the patterns consisting of the photo-sensitive film are formed. CONSTITUTION:In a pattern formation method, wherein a photosensitive film 4 is formed on a substrate 3 having a step and the film 4 is exposed and is developed to form patterns 4a and 4b consisting of the film 4, the film 4 of such a film thickness as an Eth (the minimum exposure to dissolve the film 4 with a developing solution) to the film 4 on the lower plane of the step and an Eth to the film 4 on the upper plane of the step become equal with each other is formed on the substrate 3 having the step and an exposure is performed on the film 4 at an exposure EthXk (The (k) shows a positive real number of 1 or more.). |
